NSN 5961-00-118-4773

Part Details | TRANSISTOR

5961-00-118-4773 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4302, 2N4302A, 5961004258, 5961-004258, RELEASE5219, 2N4302, 2N4302, 904733, 9-04733, 2N4302, 2N4302, 5961-00-118-4773, 00-118-4773, 5961001184773, 001184773

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 09, 196800-118-477320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-118-4773
Part Number Cage Code Manufacturer
2N4302C7191ADELCO ELEKTRONIK GMBH
2N4302AC7191ADELCO ELEKTRONIK GMBH
5961-00425814814ELDORADO ELECTRODATA CORP
RELEASE521980131ELECTRONIC INDUSTRIES ASSOCIATION
2N430280131ELECTRONIC INDUSTRIES ASSOCIATION
2N430207688JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL
9-047330NKU0LCT ELECTRONICS
2N430281349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
2N430215818TELCOM SEMICONDUCTOR INC
Technical Data | NSN 5961-00-118-4773
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAK10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL PLASTIC
MOUNTING METHOD TERMINAL
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.200 INCHES MAXIMUM
OVERALL DIAMETER0.210 INCHES MAXIMUM