Part Details | TRANSISTOR
5961-00-127-9362 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4912, 2N4912A, 2N4912, 8394912X, 839-491-2X, 580194, 580-194, 9331038, 93-31038, 106033000000, 106033-000000, B1060330000, B106033-0000, BWNT5411.06054726, BWNT5411.06-054726, 2N4912, RELEASE5442, 2N4912, SMA6186871, SMA618687-1, 5L551220422, 5L5512-204-22, CN17282103, CN17282-103, 363532, 2N4912, 2N4912, 2N4912, 2N4912, 2N4912, 2N4912, 2N4912, 2N4912, SMA6186871, SM-A-618687-1, 5961-00-127-9362, 00-127-9362, 5961001279362, 001279362
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 27, 1968 | 00-127-9362 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-127-9362
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4912 | 03864 | AAI/ACL TECHNOLOGIES INCIM AND C DIV |
| 2N4912A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N4912 | C7191 | ADELCO ELEKTRONIK GMBH |
| 839-491-2X | 25965 | AMETEK PROGRAMMABLE POWER, INC.DBA AMETEK PROGRAMMABLE POWER |
| 580-194 | 92739 | AMPEX SYSTEMS CORP |
| 93-31038 | 44114 | BAE SYSTEMS LAND & ARMAMENTS L.P. |
| 106033-000000 | 30184 | BUTLER NATIONAL CORP |
| B106033-0000 | 30184 | BUTLER NATIONAL CORP |
| BWNT5411.06-054726 | D0078 | DIEHL DEFENCE GMBH & CO. KG |
| 2N4912 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5442 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N4912 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SMA618687-1 | 04655 | GENERAL DYNAMICS MISSION SYSTEMS,INC. |
| 5L5512-204-22 | D1901 | HENSOLDT SENSORS GMBHDIV SEPS |
| CN17282-103 | 94580 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| 363532 | 09384 | KINGSTON ACQUISITION, LLCDBA CEC VIBRATION PRODUCTS |
| 2N4912 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 2N4912 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N4912 | C0187 | MOTOROLA GMBH GESCHAEFTSBEREICHHALBLEITER |
| 2N4912 | 94990 | MOTOROLA INC.DBA INTEGRATED INFORMATION SYSTEMS |
| 2N4912 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 2N4912 | U3158 | SEMELAB LIMITED |
| 2N4912 | 31338 | SEMITRONICS CORP |
| 2N4912 | 52542 | SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV |
| SM-A-618687-1 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-00-127-9362
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM AND AB1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB25.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |