Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-130-0503 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N3017B, 1N3017B, 3533122000, 353-3122-000, 3533122000, 353-3122-000, 5961-00-130-0503, 00-130-0503, 5961001300503, 001300503
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 13, 1968 | 00-130-0503 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-130-0503
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N3017B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N3017B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 353-3122-000 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 353-3122-000 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS |
Technical Data | NSN 5961-00-130-0503
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 7.5 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB34.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.350 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.350 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.225 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |