Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-173-4642 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5550A, 1N5550, 1N5550, 406662449, 40-666-2449, UT1447, 3533718043, 353-3718-043, 3533718043, 353-3718-043, 1N5550, 5961-00-173-4642, 00-173-4642, 5961001734642, 001734642
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 18, 1973 | 00-173-4642 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-173-4642
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5550A | C7191 | ADELCO ELEKTRONIK GMBH |
| 1N5550 | FAXC6 | ADVANCED SMART TECHNOLOGIES AST |
| 1N5550 | 0MTT0 | FUTURE ELECTRONICS |
| 40-666-2449 | K0802 | MEGGITT (UK) LTDDBA MEGGITT SENSING SYSTEMS |
| UT1447 | 12969 | MICRO USPD INC |
| 353-3718-043 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 353-3718-043 | 14099 | SEMTECH CORPORATION |
| 1N5550 | 14099 | SEMTECH CORPORATION |
Technical Data | NSN 5961-00-173-4642
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CH1.00 MICROAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.900 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.180 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |