Part Details | TRANSISTOR
5961-00-357-4835 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6260, 2N6260, RELEASE 6317C, 2N6260, 2N6260, 5961-00-357-4835, 00-357-4835, 5961003574835, 003574835
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 18, 1974 | 00-357-4835 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-357-4835
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6260 | 62141 | DIODE TRANSISTOR CO INC |
| 2N6260 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 6317C | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6260 | 34371 | INTERSIL CORPORATIONDIV NA |
| 2N6260 | 5L401 | SOLID STATE INC |
Technical Data | NSN 5961-00-357-4835
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC3.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB29.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 0.340 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.340 INCHES MAXIMUM |
| OVERALL WIDTH | 0.620 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |