NSN 5961-00-401-0505

Part Details | TRANSISTOR

5961-00-401-0505 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4889A, 66300333, 663-00333, RELEASE5454, 2N4889, 2N4889, 2N4889, 59227, 59-227, 18182, 18-182, 2N4889, 5961-00-401-0505, 00-401-0505, 5961004010505, 004010505

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 19, 196900-401-050520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-401-0505
Part Number Cage Code Manufacturer
2N4889AC7191ADELCO ELEKTRONIK GMBH
663-0033313488DATRON THE INSTRUMENTS INC
RELEASE545480131ELECTRONIC INDUSTRIES ASSOCIATION
2N488980131ELECTRONIC INDUSTRIES ASSOCIATION
2N488907263FAIRCHILD SEMICONDUCTOR CORP
2N488981349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
59-22754418MILTOPE CORPORATION
18-18249956RAYTHEON COMPANYDBA RAYTHEON
2N488950891SEMICONDUCTOR TECHNOLOGY INCDBA S T I
Technical Data | NSN 5961-00-401-0505
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL PLASTIC
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.250 INCHES MAXIMUM
OVERALL DIAMETER0.330 INCHES MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE5454 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION