NSN 5961-00-450-1177

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-450-1177 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5165R, RELEASE5700, 2N5165R, MCR2818R4, MCR2818R2, 725081, 5961-00-450-1177, 00-450-1177, 5961004501177, 004501177

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 12, 197100-450-117733096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-450-1177
Part Number Cage Code Manufacturer
2N5165R80131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE570080131ELECTRONIC INDUSTRIES ASSOCIATION
2N5165R04713FREESCALE SEMICONDUCTOR, INC.
MCR2818R404713FREESCALE SEMICONDUCTOR, INC.
MCR2818R204713FREESCALE SEMICONDUCTOR, INC.
72508152542SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV
Technical Data | NSN 5961-00-450-1177
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 MAXIMUM BREAKOVER VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICCG240.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAE500.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS CASE
INCLOSURE MATERIAL GLASS AND METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY2 TAB, SOLDER LUG AND 1 CASE
OVERALL LENGTH0.385 INCHES MAXIMUM
OVERALL DIAMETER0.635 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5700 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION