Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-465-8359 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: T4700D, T4700DA, DMS 88172B, 50540129, 5L552200157, 5L5522-001-57, T4700D, F0000148, F00001-48, 40576, T4700D, 40576, 4678759, 9114000002, 9114-000-002, T4700D, 40576, 5961-00-465-8359, 00-465-8359, 5961004658359, 004658359
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 16, 1970 | 00-465-8359 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-465-8359
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| T4700D | C7191 | ADELCO ELEKTRONIK GMBH |
| T4700DA | C7191 | ADELCO ELEKTRONIK GMBH |
| DMS 88172B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 50540129 | 58854 | GTE PRODUCTS CORPLIGHTING PRODUCTS GROUP |
| 5L5522-001-57 | D1901 | HENSOLDT SENSORS GMBHDIV SEPS |
| T4700D | 66844 | POWEREX, INC |
| F00001-48 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 40576 | 54590 | RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS |
| T4700D | 21921 | RCA CORPDISTRIBUTOR AND SPECIAL PRODUCTS DIV |
| 40576 | 21921 | RCA CORPDISTRIBUTOR AND SPECIAL PRODUCTS DIV |
| 4678759 | D0894 | ROHDE & SCHWARZ GMBH & CO. KG |
| 9114-000-002 | 93929 | SPX CORPORATIONDBA RADIODETECTION |
| T4700D | 29181 | WARNER AIRCRAFT ENGINEERINGDBA AIRCRAFT ENGINEERING CORPORATI |
| 40576 | 29181 | WARNER AIRCRAFT ENGINEERINGDBA AIRCRAFT ENGINEERING CORPORATI |
Technical Data | NSN 5961-00-465-8359
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AF15.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.340 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |