Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-469-5160 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 86220, 86-220, 26422621, 2642262-1, 26422621, 2642262-1, 26422621, 2642262-1, 26422621, 2642262-1, 5961-00-469-5160, 00-469-5160, 5961004695160, 004695160
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 26, 1970 | 00-469-5160 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-469-5160
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 86-220 | 12969 | MICRO USPD INC |
| 2642262-1 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| 2642262-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 2642262-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2642262-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-469-5160
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20000.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG100.00 MILLIAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL LENGTH | 0.188 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 TURRET |
| OVERALL LENGTH | 3.000 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.750 INCHES NOMINAL |
| OVERALL WIDTH | 0.750 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | ENCAPSULATED; JUNCTION PATTERN ARRANGEMENT: PN |
| SPECIFICATION/STANDARD DATA | 10001-2642262 MANUFACTURERS SOURCE CONTROL |
| END ITEM IDENTIFICATION | AN/SPG 53A RADAR |