Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-476-5587 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N4747A, 03006519, 03-0065-19, 1N4747ADO41, 1N4747A, 03006519, 03-0065-19, 1N4747A, 5961-00-476-5587, 00-476-5587, 5961004765587, 004765587
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 07, 1971 | 00-476-5587 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-476-5587
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N4747A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 03-0065-19 | 31435 | LUCAS AEROSPACE POWER EQUIPMENTCORPORATION |
| 1N4747ADO41 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N4747A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 03-0065-19 | 3CPE0 | SAFRAN POWER USA, LLC |
| 1N4747A | 1MQ07 | SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC |
Technical Data | NSN 5961-00-476-5587
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS12.50 MILLIAMPERES NOMINAL AND EA45.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.100 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.205 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |