NSN 5961-00-482-5252

Part Details | TRANSISTOR

5961-00-482-5252 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5115, RELEASE5850, 2N5115, 2N5115, 2N5115, 2N5115, U301, U-301, 2N5115, 151030, 151-030, 469620, 5961-00-482-5252, 00-482-5252, 5961004825252, 004825252

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 01, 197100-482-525220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-482-5252
Part Number Cage Code Manufacturer
2N511580131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE585080131ELECTRONIC INDUSTRIES ASSOCIATION
2N5115F4597FREESCALE SEMICONDUCTEURS FRANCESAS
2N511532293INTERSIL INCSUB OF GENERAL ELECTRIC CO
2N511512040NATIONAL SEMICONDUCTOR CORP
2N511517856SILICONIX INCORPORATEDDIV SILICONIX
U-30117856SILICONIX INCORPORATEDDIV SILICONIX
2N511521845SOLITRON DEVICES, INC.
151-03052542SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV
469620F0057THALES COMMUNICATIONS & SECURITYS.A.S
Technical Data | NSN 5961-00-482-5252
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
POWER RATING PER CHARACTERISTICAG500.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESSE5850 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION