Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-484-4610 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JANTX2N2324, 2N2324, 3371451, 2N2324, MILPRF19500276, MIL-PRF-19500/276, JAN2N2324, JANTX2N2324, 1572237, 1572237, BUWEPSDWG1572237, 4183402, 418340-2, 3539011021, 353-9011-021, 5961-00-484-4610, 00-484-4610, 5961004844610, 004844610
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 17, 1969 | 00-484-4610 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-484-4610
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX2N2324 | 81352 | AIR FORCE-NAVY AERONAUTICALSPECIFICATIONS |
| 2N2324 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 3371451 | 21340 | ITT TELECOM PRODUCTS CORPNETWORK SYSTEMS DIV |
| 2N2324 | 12969 | MICRO USPD INC |
| MIL-PRF-19500/276 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN2N2324 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX2N2324 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1572237 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| 1572237 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
| BUWEPSDWG1572237 | 03950 | NAVAL INVENTORY CONTROL POINTMECHANICSBURG |
| 418340-2 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 353-9011-021 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
Technical Data | NSN 5961-00-484-4610
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| CURRENT RATING PER CHARACTERISTIC | DM0.22 AMPERES MAXIMUM AND CF15.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 276 GOVERNMENT SPECIFICATION |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE OPTION GOLD |