Part Details | TRANSISTOR
5961-00-496-9311 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N3070, 2N3070, RELEASE4584, 2N3070, 2N3070, 2N3070, 2N3070, RNC70H4372DS, JAN2N3070, 2N3070, 2N3070, 2N3070, 2N3070, 17133891, 17-13389-1, 5961-00-496-9311, 00-496-9311, 5961004969311, 004969311
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 03, 1969 | 00-496-9311 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-496-9311
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N3070 | 27622 | BURNS AND TOWNE INC |
| 2N3070 | 11058 | CSR INDUSTRIES INC |
| RELEASE4584 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3070 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3070 | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| 2N3070 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 2N3070 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| RNC70H4372DS | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN2N3070 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N3070 | 12040 | NATIONAL SEMICONDUCTOR CORP |
| 2N3070 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 2N3070 | 21845 | SOLITRON DEVICES, INC. |
| 2N3070 | 15818 | TELCOM SEMICONDUCTOR INC |
| 17-13389-1 | 04614 | TEXTRON SYSTEMS CORPORATIONDBA TEXTRON DEFENSE SYSTEMS |
Technical Data | NSN 5961-00-496-9311
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | AK100.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB350.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE4584 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |