NSN 5961-00-497-0976

Part Details | TRANSISTOR

5961-00-497-0976 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4928, RELEASE5708, 2N4928, 2N4928, 5051117, 5051-117, 2N4928, 5961-00-497-0976, 00-497-0976, 5961004970976, 004970976

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 10, 197100-497-097620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-497-0976
Part Number Cage Code Manufacturer
2N492880131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE570880131ELECTRONIC INDUSTRIES ASSOCIATION
2N492804713FREESCALE SEMICONDUCTOR, INC.
2N49285V1P1ON SEMICONDUCTOR CORPORATION
5051-11705869RAYTHEON COMPANYDBA RAYTHEON
2N492850891SEMICONDUCTOR TECHNOLOGY INCDBA S T I
Technical Data | NSN 5961-00-497-0976
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB600.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE5708 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION