NSN 5961-00-497-1117

Part Details | TRANSISTOR

5961-00-497-1117 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 11188234, 1118823-4, 2N336A, 2N336A, 11188234, 1118823-4, 1190056, 119-0056, 2N336A, 1190056, 119-0056, 2N336A, 5961-00-497-1117, 00-497-1117, 5961004971117, 004971117

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 03, 197100-497-111720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-497-1117
Part Number Cage Code Manufacturer
1118823-483298ALLIED SIGNAL INCAEROSPACE EQUIPMENT SYSTEMS
2N336A08806GENERAL ELECTRIC COMINIATURE LAMP PRODUCTS DEPT
2N336A09214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
1118823-464547HONEYWELL INTERNATIONAL INCDBA HONEYWELL
119-005685604KEPCO, INC.
2N336AR1120SATAIR A/S
119-005607256SILICON TRANSISTOR CORPSUB OF BBF INC
2N336A01295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-497-1117
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC25.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB500.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.188 INCHES NOMINAL
OVERALL DIAMETER0.220 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE