NSN 5961-00-498-8453

Part Details | TRANSISTOR

5961-00-498-8453 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 3N162, SM0029, 3890911, 389091-1, 3890911, 389091-1, 3890911, 389091-1, 5961-00-498-8453, 00-498-8453, 5961004988453, 004988453

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 15, 196900-498-845320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-498-8453
Part Number Cage Code Manufacturer
3N16260991MICROCHIP TECHNOLOGY INCORPORATED
SM002960991MICROCHIP TECHNOLOGY INCORPORATED
389091-154X10RAYTHEON COMPANYDBA RAYTHEON
389091-149956RAYTHEON COMPANYDBA RAYTHEON
389091-13B150RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-498-8453
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAD250.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG2.0 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE BASE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.250 INCHES NOMINAL
OVERALL DIAMETER0.359 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5889 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION