Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-499-7247 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N3017B, RELEASE 3852, 1N3830, SZ51252H2, SZ51252H-2, SZM20016H1, 1N3017B, 1N3017B, 1N3017B, 1N3017B, DZ750207C, DZ700910C, MILS19500115, MIL-S-19500/115, MILPRF19500115, MIL-PRF-19500/115, JANTX1N3017B1, JANTX1N3017B-1, JANTX1N3017B, 1N3017B, 9254211B, 925421-1B, 9250592, 925059-2, 5961-00-499-7247, 00-499-7247, 5961004997247, 004997247
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 09, 1971 | 00-499-7247 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-499-7247
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N3017B | 16352 | C O D I CORPDBA CODI SEMICONDUCTOR INC |
| RELEASE 3852 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N3830 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| SZ51252H-2 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SZM20016H1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N3017B | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 1N3017B | 07595 | HUG ELECTRONICS CORP |
| 1N3017B | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 1N3017B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| DZ750207C | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| DZ700910C | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| MIL-S-19500/115 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/115 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N3017B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N3017B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1N3017B | 58022 | R F PRODUCTS, INC. |
| 925421-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 925059-2 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-499-7247
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS34.00 MILLIAMPERES NOMINAL AND EA125.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |