Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-501-2000 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N216, RELEASE 1348, PE8410000023, PE841000002-3, 1N216, 8199247, 5961-00-501-2000, 00-501-2000, 5961005012000, 005012000
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-501-2000 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-501-2000
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N216 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 1348 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| PE841000002-3 | 38597 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 1N216 | 99942 | N A P SMD TECHNOLOGY INC |
| 8199247 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-501-2000
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | CG9.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AG150.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | 0$DPC0000 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.062 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.375 INCHES NOMINAL |
| OVERALL DIAMETER | 0.219 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | TYPE NO. TM-61C |