Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-503-9921 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5364B, 713766, 1N5364B, 713766, 3R33A, 5961-00-503-9921, 00-503-9921, 5961005039921, 005039921
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 20, 1974 | 00-503-9921 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-503-9921
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5364B | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 713766 | 82199 | ROHDE & SCHWARZ USA, INC. |
| 1N5364B | 82199 | ROHDE & SCHWARZ USA, INC. |
| 713766 | 31338 | SEMITRONICS CORP |
| 3R33A | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-503-9921
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 33.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB23.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB3.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.425 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.375 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |