Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-504-7669 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N303, RELEASE1671, 1N303, 3221057P1, 322-1057P1, 3221057P1, 322-1057P1, 1N303, 1N303, 5961-00-504-7669, 00-504-7669, 5961005047669, 005047669
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-504-7669 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-504-7669
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N303 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE1671 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N303 | 04655 | GENERAL DYNAMICS MISSION SYSTEMS,INC. |
| 322-1057P1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 322-1057P1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N303 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N303 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-504-7669
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CH0.01 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF150.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE1671 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |