NSN 5961-00-517-6200

Part Details | TRANSISTOR

5961-00-517-6200 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: VZ1005, 4808651, 480865-1, 4808651, 480865-1, 4808651, 480865-1, 85SE281, 185SEA281, 5961-00-517-6200, 00-517-6200, 5961005176200, 005176200

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 29, 197200-517-620020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-517-6200
Part Number Cage Code Manufacturer
VZ100512969MICRO USPD INC
480865-154X10RAYTHEON COMPANYDBA RAYTHEON
480865-149956RAYTHEON COMPANYDBA RAYTHEON
480865-13B150RAYTHEON COMPANYDBA RAYTHEON
85SE28121845SOLITRON DEVICES, INC.
185SEA28121845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-517-6200
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC10.00 AMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.328 INCHES MAXIMUM
OVERALL DIAMETER0.740 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN