Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-518-3216 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N138B, RELEASE2026, 1N138B, 1N138B, L2219792, L221979-2, 5961-00-518-3216, 00-518-3216, 5961005183216, 005183216
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-518-3216 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-518-3216
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N138B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2026 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N138B | 99872 | ENTRON INDUSTRIES LIMITEDPARTNERSHIP |
| 1N138B | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| L221979-2 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-518-3216
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 18.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CH0.01 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF150.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.350 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.200 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | CATHODE MARKED BY RED DOT |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2026 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| END ITEM IDENTIFICATION | TYPE NO. IP-372/TLR-3 |