Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-519-8252 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 666068169, 666068-169, 1D11, 1D1-1, 620C, 620C, 5961-00-519-8252, 00-519-8252, 5961005198252, 005198252
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-519-8252 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-519-8252
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 666068-169 | 12436 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 1D1-1 | 97896 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| 620C | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 620C | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-519-8252
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG20.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF20.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | 0$DPC0000 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES NOMINAL |
| OVERALL HEIGHT | 0.210 INCHES NOMINAL |
| OVERALL WIDTH | 0.135 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |