Part Details | TRANSISTOR
5961-00-520-5223 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1410, 2N1410, 11150932, 5961-00-520-5223, 00-520-5223, 5961005205223, 005205223
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 16, 1969 | 00-520-5223 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-520-5223
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1410 | 31338 | SEMITRONICS CORP |
| 2N1410 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
| 11150932 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-520-5223
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | BG100.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF600.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.210 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |