Part Details | TRANSISTOR
5961-00-521-2504 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 17&817&077&00, 1781707700, 17-817-077-00, TIS98, 5218231, 5218-231, TIS98, 5961-00-521-2504, 00-521-2504, 5961005212504, 005212504
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 25, 1974 | 00-521-2504 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-521-2504
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 17&817&077&00 | 12692 | DIGITAL DEVELOPMENT CORPHAWTHORNE DIV |
| 17-817-077-00 | 16331 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| TIS98 | 12040 | NATIONAL SEMICONDUCTOR CORP |
| 5218-231 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| TIS98 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-521-2504
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB625.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.165 INCHES MAXIMUM |
| OVERALL WIDTH | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |