Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-529-2685 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N751BA, 1N751B, 712 ITT 04020 SAAT, 1N751A, 1688704, 168870-4, 1N7518, 1N751B, 1N5231C, 1N751B, 1850065, 185-0065, 1N751A, 19020041, 1902-0041, 208880972, 2088809-72, 20888090072, 2088809-0072, 120430117, 12043-0117, JAN1N751A, 1N751, TX1N751A, JAN1N751A, 1081H34H12, 1080H80H17, F0000150, F00001-50, 1N751B, 5961-00-529-2685, 00-529-2685, 5961005292685, 005292685
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 07, 1974 | 00-529-2685 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-529-2685
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N751BA | C7191 | ADELCO ELEKTRONIK GMBH |
| 1N751B | C7191 | ADELCO ELEKTRONIK GMBH |
| 712 ITT 04020 SAAT | N0002 | ALCATEL-LUCENT NORWAY AS |
| 1N751A | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 168870-4 | 14688 | CENTRAL STATES MAINTENANCE INC |
| 1N7518 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N751B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5231C | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 1N751B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 185-0065 | 93568 | HARSCO CORPBMY-COMBAT SYSTEMS DIV |
| 1N751A | 93568 | HARSCO CORPBMY-COMBAT SYSTEMS DIV |
| 1902-0041 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 2088809-72 | 27914 | HONEYWELL INTERNATIONAL INCDBA HONEYWELL |
| 2088809-0072 | 27914 | HONEYWELL INTERNATIONAL INCDBA HONEYWELL |
| 12043-0117 | 27914 | HONEYWELL INTERNATIONAL INCDBA HONEYWELL |
| JAN1N751A | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 1N751 | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
| TX1N751A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N751A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1081H34H12 | 04804 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDBA ES POWER CONTROL SYSTEMS |
| 1080H80H17 | 04804 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDBA ES POWER CONTROL SYSTEMS |
| F00001-50 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N751B | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-529-2685
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AS20.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG400.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.115 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |