NSN 5961-00-540-9621

Part Details | UNITIZED SEMICONDUCTOR DEVICES

5961-00-540-9621 Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Alternate Parts: SJ1941H, MJ2500, M235A1471, M235A147-1, M1471, M147-1, SJ1941H, 5961-00-540-9621, 00-540-9621, 5961005409621, 005409621

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 28, 197400-540-962161962 ( SEMICONDUCTOR DEVICES, UNITIZED )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-540-9621
Part Number Cage Code Manufacturer
SJ1941H04713FREESCALE SEMICONDUCTOR, INC.
MJ250004713FREESCALE SEMICONDUCTOR, INC.
M235A147-109966INSTRUMENT SYSTEMS CORP
M147-109966INSTRUMENT SYSTEMS CORP
SJ1941H5V1P1ON SEMICONDUCTOR CORPORATION
Technical Data | NSN 5961-00-540-9621
Characteristic Specifications
COMPONENT NAME AND QUANTITY2 TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL METAL
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY1 CASE AND 2 PIN
OVERALL LENGTH1.550 INCHES MAXIMUM
OVERALL HEIGHT0.300 INCHES MAXIMUM
OVERALL WIDTH1.050 INCHES MAXIMUM
FUNCTION FOR WHICH DESIGNED AMPLIFIER
FEATURES PROVIDED BURN IN
SPECIAL FEATURESINTERNAL JUNCTION CONFIGURATION TRANSISTOR PNP