Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-550-9050 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C32C, C232C, C32C, 5961-00-550-9050, 00-550-9050, 5961005509050, 005509050
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 27, 1974 | 00-550-9050 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-550-9050
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C32C | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| C232C | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| C32C | 29192 | OLYMPUS SCIENTIFIC SOLUTIONSTECHNOLOGIES INC. |
Technical Data | NSN 5961-00-550-9050
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CG250.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AE500.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.494 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND 1 CASE |
| OVERALL LENGTH | 0.380 INCHES NOMINAL |
| OVERALL DIAMETER | 0.505 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |