Part Details | TRANSISTOR
5961-00-552-0675 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N110, 2N110, RELEASE1937, 2N110, 5961-00-552-0675, 00-552-0675, 5961005520675, 005520675
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-552-0675 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-552-0675
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N110 | 64959 | AMERICAN TELEPHONE AND TELEGRAPH CO |
| 2N110 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE1937 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N110 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
Technical Data | NSN 5961-00-552-0675
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | POINT CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC40.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB200.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.350 INCHES NOMINAL |
| OVERALL DIAMETER | 0.470 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELEAE1937 GOVERNMENT SPECIFICATION |