Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-558-8588 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 401PDL100S20, R6221040EJ100, R6221040EJ100, 5961-00-558-8588, 00-558-8588, 5961005588588, 005588588
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 14, 1974 | 00-558-8588 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-558-8588
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 401PDL100S20 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| R6221040EJ100 | 03277 | MICROTIME LABORATORIES |
| R6221040EJ100 | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-558-8588
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| CURRENT RATING PER CHARACTERISTIC | CH35.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 TURRET |
| OVERALL LENGTH | 1.400 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| OVERALL DIAMETER | 1.420 INCHES MINIMUM AND 1.700 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |