NSN 5961-00-563-1170

Part Details | TRANSISTOR

5961-00-563-1170 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5397, 2N5397A, 209059P1, RELEASE5794, 2N5397, 2N5397, 2N5397A, 2N5397A, 2N5397, 2N5397, 2N5397A, A3650502348, A3-65050-2348, 650502348, 65050-2348, 2000573001, 20-00573-001, 2N5397, E420, 2N5397, 2N5397A, 2N5397, A3650502348, A3-65050-2348, 650502348, 65050-2348, 5961-00-563-1170, 00-563-1170, 5961005631170, 005631170

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 20, 196900-563-117020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-563-1170
Part Number Cage Code Manufacturer
2N5397C7191ADELCO ELEKTRONIK GMBH
2N5397AC7191ADELCO ELEKTRONIK GMBH
209059P194117BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC.
RELEASE579480131ELECTRONIC INDUSTRIES ASSOCIATION
2N539780131ELECTRONIC INDUSTRIES ASSOCIATION
2N539766182INTERFET CORPORATION
2N5397A34371INTERSIL CORPORATIONDIV NA
2N5397A32293INTERSIL INCSUB OF GENERAL ELECTRIC CO
2N539732293INTERSIL INCSUB OF GENERAL ELECTRIC CO
2N539781349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
2N5397A27014NATIONAL SEMICONDUCTOR CORPORATION
A3-65050-2348K1384RACAL RADAR DEFENCE SYSTEMS LTD
65050-2348K1384RACAL RADAR DEFENCE SYSTEMS LTD
20-00573-00100724RAYTHEON COMPANYDBA RAYTHEON
2N5397K0461RAYTHEON SYSTEMS LTD WEAPONSSUPPORT GROUP
E42017856SILICONIX INCORPORATEDDIV SILICONIX
2N539717856SILICONIX INCORPORATEDDIV SILICONIX
2N5397A21845SOLITRON DEVICES, INC.
2N539721845SOLITRON DEVICES, INC.
A3-65050-2348U4338THALES UK LIMITED DBA THALES UKLTDDEFENCE MISSION SYSTEMS
65050-2348U4338THALES UK LIMITED DBA THALES UKLTDDEFENCE MISSION SYSTEMS
Technical Data | NSN 5961-00-563-1170
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 10.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 6.0 MAXIMUM PEAK-POINT VOLTAGE
CURRENT RATING PER CHARACTERISTICAC10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5794 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION