Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-578-5580 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N539, 1N539, 1N539, 1N539, 351580, 2321148P3, 232-1148P3, 2321148P3, 232-1148P3, 1N539, 1N539, 1N539, 351580, 9062658, 5961-00-578-5580, 00-578-5580, 5961005785580, 005785580
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-578-5580 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-578-5580
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N539 | 51182 | DIODES INC |
| 1N539 | 24446 | GENERAL ELECTRIC COMPANY |
| 1N539 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 1N539 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 351580 | 1PQF4 | L3 TECHNOLOGIES, INC.DBA LINK SIMULATION & TRAINING |
| 232-1148P3 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 232-1148P3 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N539 | 94144 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N539 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N539 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 351580 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 9062658 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-578-5580
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |