NSN 5961-00-581-6189

Part Details | TRANSISTOR

5961-00-581-6189 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 3N169, RELEASE5983, 3N169, 3N169, 3N169, AT0042001, AT0042/001, 5961-00-581-6189, 00-581-6189, 5961005816189, 005816189

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 19, 197400-581-618920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-581-6189
Part Number Cage Code Manufacturer
3N16980131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE598380131ELECTRONIC INDUSTRIES ASSOCIATION
3N16904713FREESCALE SEMICONDUCTOR, INC.
3N16914936GENERAL SEMICONDUCTOR INC
3N16932293INTERSIL INCSUB OF GENERAL ELECTRIC CO
AT0042/00122915NORTHROP GRUMMAN CORPELECTRONIC SYSTEMS DEFENSIVE SYSTEM
Technical Data | NSN 5961-00-581-6189
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAD30.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG800.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE SOURCE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5983 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION