Part Details | TRANSISTOR
5961-00-581-8228 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 11000610001, 11-000610-001, 2N5639, RELEASE5986, 2N5639, 05E05639, 2N5639, 5961-00-581-8228, 00-581-8228, 5961005818228, 005818228
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 19, 1974 | 00-581-8228 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-581-8228
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 11-000610-001 | 50460 | CAELUS MEMORIES INCDIS DRIVE DIV |
| 2N5639 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5986 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5639 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 05E05639 | 50319 | HEKIMIAN LABORATORIES INCCUSTOMER SUPPORT DEPT |
| 2N5639 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-00-581-8228
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| POWER RATING PER CHARACTERISTIC | AG310.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.165 INCHES MAXIMUM |
| OVERALL WIDTH | 0.205 INCHES MAXIMUM |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |