Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-584-4505 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5165A, 1N5165, 508291491N5165, 5082-9149-1N5165, 50829149, 5082-9149, 1N5165, 1N5165, 1N5165, RELEASE5407, 1N5165, 1N5165, 508291491N5165, 5082-9149-1N5165, 50829149, 5082-9149, 1N5165, 81C415M001, 4576009, 457-6009, 1782781, 178278-1, 1N5165, 5961-00-584-4505, 00-584-4505, 5961005844505, 005844505
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 28, 1974 | 00-584-4505 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-584-4505
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5165A | C7191 | ADELCO ELEKTRONIK GMBH |
| 1N5165 | C7191 | ADELCO ELEKTRONIK GMBH |
| 5082-9149-1N5165 | 1MY97 | AGILENT TECHNOLOGIES, INC.DIV AGILENT TECHNOLOGIES |
| 5082-9149 | 1MY97 | AGILENT TECHNOLOGIES, INC.DIV AGILENT TECHNOLOGIES |
| 1N5165 | 1MY97 | AGILENT TECHNOLOGIES, INC.DIV AGILENT TECHNOLOGIES |
| 1N5165 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 1N5165 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5407 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5165 | 21847 | FEI MICROWAVE INC |
| 1N5165 | 14844 | FREQUENCY ELECTRONICS, INC. |
| 5082-9149-1N5165 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 5082-9149 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1N5165 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 81C415M001 | A1615 | LEONARDO S.P.A A LAND & NAVALDEFE ELECTRONICS DIVISION |
| 457-6009 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 178278-1 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N5165 | 21854 | SPACE POWER ELECTRONICS INC |
Technical Data | NSN 5961-00-584-4505
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.0 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC |
| CURRENT RATING PER CHARACTERISTIC | AF50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF125.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.165 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.075 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5407 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |