NSN 5961-00-586-4919

Part Details | TRANSISTOR

5961-00-586-4919 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N3457, RELEASE4832, 82101082, 8210-1082, 82101082, 8210-1082, 2N3457, 2N3457, 2N3457, 5961-00-586-4919, 00-586-4919, 5961005864919, 005864919

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 29, 196800-586-491920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-586-4919
Part Number Cage Code Manufacturer
2N345780131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE483280131ELECTRONIC INDUSTRIES ASSOCIATION
8210-108224655GENRAD INC
8210-108262015IET LABS., INC.DBA IET LABS
2N345712040NATIONAL SEMICONDUCTOR CORP
2N345717856SILICONIX INCORPORATEDDIV SILICONIX
2N345715818TELCOM SEMICONDUCTOR INC
Technical Data | NSN 5961-00-586-4919
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAK10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS CASE
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES NOMINAL
OVERALL DIAMETER0.230 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE4832 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION