NSN 5961-00-596-3297

Part Details | TRANSISTOR

5961-00-596-3297 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N6166, ASI10790, SPF750, 0488560002, 048856-0002, 5961-00-596-3297, 00-596-3297, 5961005963297, 005963297

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 11, 197500-596-329720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-596-3297
Part Number Cage Code Manufacturer
2N61664U751ADVANCED SEMICONDUCTOR,INC.DBA A S I
ASI107904U751ADVANCED SEMICONDUCTOR,INC.DBA A S I
SPF75004713FREESCALE SEMICONDUCTOR, INC.
048856-000265597THALES DEFENSE & SECURITY, INC.
Technical Data | NSN 5961-00-596-3297
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 35.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC9.00 MILLIAMPERES MAXIMUM AND BF30.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG117.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL CERAMIC AND METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY4 RIBBON
OVERALL LENGTH1.050 INCHES MAXIMUM
OVERALL HEIGHT0.280 INCHES MAXIMUM
OVERALL WIDTH0.980 INCHES MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
PRECIOUS MATERIAL AND LOCATIONINTERNAL METALIZATION GOLD