Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-615-3857 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: FDH656, FDH656, DAR63, 1N23WE, NAS1102C022, NAS1102C02-2, 9252522, 925252-2, PG613, 5961-00-615-3857, 00-615-3857, 5961006153857, 006153857
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 12, 1975 | 00-615-3857 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-615-3857
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FDH656 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| FDH656 | 13715 | FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP |
| DAR63 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 1N23WE | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| NAS1102C02-2 | 80205 | NATIONAL AEROSPACE STANDARDSCOMMITTEE AEROSPACE INDUSTRIES |
| 925252-2 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| PG613 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-615-3857
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REVERSE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CG200.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF500.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.080 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |