Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-615-5199 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N1138, 1N1138, RELEASE1930, 1N1138, 1N1138, 1N1138, 1N1138, 1N1138, 1N1138, 1N1138, 2321160P1, 232-1160P1, 2321160P1, 232-1160P1, 2321160P1, 232-1160P1, 1N1138, 1N1138, 1N1138, 1N1138, 1N1138, 1N1138, 10046488, 5961-00-615-5199, 00-615-5199, 5961006155199, 006155199
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-615-5199 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-615-5199
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N1138 | 14909 | ALPINE INDUSTRIES INC |
| 1N1138 | 83701 | ELECTRONIC DEVICES INCDBA E D I |
| RELEASE1930 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N1138 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N1138 | 14936 | GENERAL SEMICONDUCTOR INC |
| 1N1138 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 1N1138 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 1N1138 | 14433 | ITT SEMICONDUCTORS DIV |
| 1N1138 | 59377 | MICROSEMI CORP-COLORADO |
| 1N1138 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 232-1160P1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 232-1160P1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 232-1160P1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N1138 | 11961 | SEMICON COMPONENTS INC |
| 1N1138 | 14099 | SEMTECH CORPORATION |
| 1N1138 | 30043 | SOLID STATE DEVICES, INC. |
| 1N1138 | 21845 | SOLITRON DEVICES, INC. |
| 1N1138 | 51589 | ST-SEMICON INC |
| 1N1138 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
| 10046488 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-615-5199
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 240.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG0.06 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 170.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.590 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 1.320 INCHES NOMINAL |
| OVERALL DIAMETER | 0.590 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE1930 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |