Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-615-5237 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 2321163P7, 232-1163P7, 2321163P7, 232-1163P7, 303G, 303G, 5961-00-615-5237, 00-615-5237, 5961006155237, 006155237
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-615-5237 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-615-5237
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 232-1163P7 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 232-1163P7 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 303G | 79500 | WESTINGHOUSE ELECTRIC CORP |
| 303G | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-615-5237
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 350.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG22.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF30.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 190.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 0.450 INCHES NOMINAL |
| OVERALL WIDTH ACROSS FLATS | 0.687 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |