NSN 5961-00-615-6400

Part Details | TRANSISTOR

5961-00-615-6400 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5432, 202303002, 202303-002, CM881, 2N5432, RELEASE5800, 2N5432, 5E4860020001, 5E4860/02-0001, 18550292, 1855-0292, 2N5432, 019005274, 019-005274, 7727851, 772785-1, 6379117002, 637-9117-002, 3521069010, 352-1069-010, AM2968700, 140389525, 14038952-5, 2N5432, 5E4860020001, 5E4860/02-0001, FN4748, 2N5432, 5E4860020001, 5E4860/02-0001, 99097143, 91524154, 5961-00-615-6400, 00-615-6400, 5961006156400, 006156400

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 12, 197500-615-640020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-615-6400
Part Number Cage Code Manufacturer
2N543217885AVERY WEIGH-TRONIX, LLCDBA DILLON
202303-00281413BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I
CM88112498CRYSTALONICS, INC.
2N543212498CRYSTALONICS, INC.
RELEASE580080131ELECTRONIC INDUSTRIES ASSOCIATION
2N543280131ELECTRONIC INDUSTRIES ASSOCIATION
5E4860/02-000173030HAMILTON SUNDSTRAND CORPORATION
1855-029228480HEWLETT-PACKARD COMPANYDBA HP
2N543266182INTERFET CORPORATION
019-00527426916NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV MULTIPLE
772785-196214RAYTHEON COMPANYDBA RAYTHEON
637-9117-00213499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-1069-01013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
AM2968700D0894ROHDE & SCHWARZ GMBH & CO. KG
14038952-5F6151SAFRAN
2N5432U3158SEMELAB LIMITED
5E4860/02-00013G591SILICONIX INCEASTERN AREA OFFICE
FN474817856SILICONIX INCORPORATEDDIV SILICONIX
2N543217856SILICONIX INCORPORATEDDIV SILICONIX
5E4860/02-000121845SOLITRON DEVICES, INC.
99097143F6481THALES SA
91524154F6481THALES SA
Technical Data | NSN 5961-00-615-6400
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICCW400.00 MILLIAMPERES MAXIMUM AND AK100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY1 CASE AND 3 PIN
OVERALL LENGTH0.150 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESWEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA80131-RELESE5800 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
CRITICALITY CODE JUSTIFICATIONFEAT
END ITEM IDENTIFICATIONTICONDEROGA CLASS CG (47); TACTICAL AIR OPNS MODULE (AN/TYQ-(23); SPRUANCE CLASS DD (963); MISSILE, ALL-WEATHER ANTI-SHIP, HRPOON (AGM-84); LOS ANGELES CLASS SSN (688); AIRBORNE MOBILE DIR AIR SPT CTL (21D), (02M JUL 83) (AN/UYQ-3A); AIRCRAFT, (AC-130H, EC-130E, HC-130); LANDING CRAFT AIR CUSHION (