Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-617-5076 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N3306RB, RELEASE3669, 138131371, 13-813137-1, 1N3306RB, 5961-00-617-5076, 00-617-5076, 5961006175076, 006175076
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 22, 1969 | 00-617-5076 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-617-5076
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N3306RB | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3669 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 13-813137-1 | 07397 | GENERAL DYNAMICS ADVANCEDINFORMATION SYSTEMS INC. |
| 1N3306RB | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
Technical Data | NSN 5961-00-617-5076
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 7.5 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB1.70 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF50.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.667 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.687 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3669 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |