NSN 5961-00-619-7191

Part Details | TRANSISTOR

5961-00-619-7191 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: NX2N4353, 3N172TX, 3N172/TX, 9580830001, 958-083-0001, 3N172TX, 3N172/TX, 3N172TX, 3N172/TX, 5961-00-619-7191, 00-619-7191, 5961006197191, 006197191

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 11, 197100-619-719120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-619-7191
Part Number Cage Code Manufacturer
NX2N435314936GENERAL SEMICONDUCTOR INC
3N172/TX32293INTERSIL INCSUB OF GENERAL ELECTRIC CO
958-083-000195542NORTHROP GRUMMAN SYSTEMS CORPORATION
3N172/TX17856SILICONIX INCORPORATEDDIV SILICONIX
3N172/TX21845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-619-7191
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC-40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -40.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICADM50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG375.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-72
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE