Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-628-8735 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5155, 1N5155A, RELEASE5381, 1N5155A, 1N5155, 1N5155A, 1N5155, 6196871, 619687-1, 10186002, 1N5155A, 5961-00-628-8735, 00-628-8735, 5961006288735, 006288735
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 16, 1971 | 00-628-8735 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-628-8735
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5155 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 1N5155A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5381 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5155A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5155 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5155A | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 1N5155 | 21455 | PARAMETRIC INDUSTRIES INC |
| 619687-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| 10186002 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
| 1N5155A | 07866 | WILTON CORPWILTON MACHINERY DIV |
Technical Data | NSN 5961-00-628-8735
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| POWER RATING PER CHARACTERISTIC | AG6.2 WATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 FERRULE |
| OVERALL LENGTH | 3.0 MILLIMETERS MAXIMUM |
| OVERALL DIAMETER | 0.123 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | VARACTOR DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5381 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |