Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-632-8268 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: MA49543B, MA49543-B, VS9201GT, VSX9201EY(B), 9255221B, 925522-1B, 5961-00-632-8268, 00-632-8268, 5961006328268, 006328268
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 21, 1975 | 00-632-8268 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-632-8268
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MA49543-B | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| VS9201GT | 99313 | COMMUNICATIONS & POWER INDUSTRIESLLC |
| VSX9201EY(B) | 99313 | COMMUNICATIONS & POWER INDUSTRIESLLC |
| 925522-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-632-8268
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.7 NOMINAL THRESHOLD VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M0.3/P0.3 |
| POWER RATING PER CHARACTERISTIC | CQ100.0 MILLIWATTS MINIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 71.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 2 CASE |
| OVERALL LENGTH | 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 82577-925522 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |