Part Details | TRANSISTOR
5961-00-641-7301 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N167, 2N167, 2N167, 723099009, 723099-009, 5961-00-641-7301, 00-641-7301, 5961006417301, 006417301
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-641-7301 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-641-7301
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N167 | 12045 | ELECTRONIC TRANSISTORS CORP |
| 2N167 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 2N167 | 53399 | GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS |
| 723099-009 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-641-7301
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC75.00 MILLIAMPERES MAXIMUM AND BF1.50 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB65.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.320 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.530 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |