NSN 5961-00-669-6858

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-00-669-6858 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: 1N302A, RELEASE1671, 1N302A, 1N302A, 12606321, 1260632-1, 354157513, 354-1575-13, 3221063P2, 322-1063P2, 1N302A, 1N302A, 1N302A, 5961-00-669-6858, 00-669-6858, 5961006696858, 006696858

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196300-669-685820589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-669-6858
Part Number Cage Code Manufacturer
1N302A80131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE167180131ELECTRONIC INDUSTRIES ASSOCIATION
1N302A03877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
1N302A44655HEICO OHMITE, L.L.C.DBA OHMITE MANUFACTURING
1260632-155972HONEYWELL INTL INCDEFENSE AVIONICS SYSTEMS
354-1575-1311530LOCKHEED MARTIN CORPORATIONDIV LOCKHEED MARTIN INFORMATION
322-1063P249956RAYTHEON COMPANYDBA RAYTHEON
1N302A54X10RAYTHEON COMPANYDBA RAYTHEON
1N302A49956RAYTHEON COMPANYDBA RAYTHEON
1N302A3B150RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-669-6858
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC225.0 MAXIMUM REVERSE VOLTAGE, PEAK
CURRENT RATING PER CHARACTERISTICAF5.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF150.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.257 INCHES NOMINAL
OVERALL HEIGHT0.235 INCHES NOMINAL
OVERALL WIDTH0.132 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE1671 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION