Part Details | SEMICONDUCTOR DEVICE RECTIFIER
5961-00-679-1808 Two or more interconnected SEMICONDUCTOR DEVICE (1), DIODE arranged in stack(s) for use in power supplies to change alternating current to direct current. For items containing material such as selenium or copper oxide, see RECTIFIER, METALLIC.
Alternate Parts: 26825, 26-825, 9073135, 508C540G86, 5961-00-679-1808, 00-679-1808, 5961006791808, 006791808
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-679-1808 | 00300 ( RECTIFIER, SEMICONDUCTOR DEVICE ) |
REFERENCE DRAWINGS & PICTURES
BRIDGE 3 PHASE
Cross Reference | NSN 5961-00-679-1808
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 26-825 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 9073135 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
| 508C540G86 | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-679-1808
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 22.0 FORWARD VOLTAGE, TOTAL RMS |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | 36.000 AMPERES PEAK POINT CURRENT |
| MOUNTING METHOD | BRACKET |
| CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 3 PHASE |
| OPERATING TEMP RANGE | -55.0 TO +150.0 DEG CELSIUS |
| OVERALL LENGTH | 4.125 INCHES NOMINAL |
| OVERALL WIDTH | 3.250 INCHES NOMINAL |
| OVERALL HEIGHT | 3.250 INCHES NOMINAL |
| SPECIAL FEATURES | FOUR 0.218 IN.BY 0.468 IN.MTG SLOTS ON 1.000 IN.BY 5.000 IN.MTG CENTERS;LEAD TYPE:INDUCTIVE AND RESISTIVE;DC OUTPUT MAX VOTAGE:28.0;TERMINAL TYPE AND QTY:BUS BAR 2 AND BRACKET 3 |