Part Details | TRANSISTOR
5961-00-682-8893 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N553, 6178531, 170008, 17-0008, 5961-00-682-8893, 00-682-8893, 5961006828893, 006828893
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-682-8893 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-682-8893
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N553 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 6178531 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| 17-0008 | 59437 | TELAUTOGRAPH CORPSUB OF ARDEN MAYFAIR CORP |
Technical Data | NSN 5961-00-682-8893
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC4.00 AMPERES MAXIMUM AND AB1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB35.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.500 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |