Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-685-8991 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N66, 1N66, 1N66, 1N66, 1N66, 1N66, 1N66, 1N66, 1N66, 1N66, 1N66, 5961-00-685-8991, 00-685-8991, 5961006858991, 006858991
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-685-8991 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-685-8991
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N66 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N66 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 1N66 | 14936 | GENERAL SEMICONDUCTOR INC |
| 1N66 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 1N66 | 14433 | ITT SEMICONDUCTORS DIV |
| 1N66 | 92703 | KEMTRON ELECTRON PRODUCTS INC |
| 1N66 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N66 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N66 | 12102 | SEMICONDUCTOR DEVICES INC |
| 1N66 | 31338 | SEMITRONICS CORP |
| 1N66 | 34428 | UNITED PAGE INC |
Technical Data | NSN 5961-00-685-8991
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AF5.00 MILLIAMPERES MAXIMUM AND CH50.00 MICROAMPERES MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |